2
RF Device Data
Freescale Semiconductor, Inc.
MRF8S7170NR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
IV
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
?C
Table 5. Electrical Characteristics
(TA
=25?C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS
=70Vdc,VGS
=0Vdc)
IDSS
—
—
10
?Adc
Zero Gate Voltage Drain Leakage Current
(VDS
=28Vdc,VGS
=0Vdc)
IDSS
—
—
1
?Adc
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
—
—
1
?Adc
On Characteristics
Gate Threshold Voltage
(VDS
=10Vdc,ID
= 355
?Adc)
VGS(th)
1.5
2.3
3
Vdc
Gate Quiescent Voltage
(VDD
=28Vdc,ID
= 1200 mAdc, Measured in Functional Test)
VGS(Q)
2.3
3.1
3.8
Vdc
Drain--Source On--Voltage
(VGS
=10Vdc,ID
=2.9Adc)
VDS(on)
0.1
0.22
0.3
Vdc
Functional Tests
(1)
(In Freescale Test Fixture, 50 ohm system) VDD
=28Vdc,IDQ
= 1200 mA, Pout
= 50 W Avg., f = 748 MHz,
Single--Carrier W--CDMA, IQ Magnitude
Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
?5MHzOffset.
Power Gain
Gps
18.0
19.5
21.0
dB
Drain Efficiency
?D
34.0
37.0
—
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR
5.7
6.1
—
dB
Adjacent Channel Power Ratio
ACPR
—
--37.5
--35.0
dBc
Input Return Loss
IRL
—
-- 2 4
-- 9
dB
Typical Broadband Performance
(In Freescale Test Fixture, 50 ohm system) VDD
=28Vdc,IDQ
= 1200 mA, Pout
=50WAvg.,
Single--Carrier W--CDMA, IQ Magnitude
Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
?5MHzOffset.
Frequency
Gps
(dB)
?D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
728 MHz
19.7
37.1
6.2
--38.7
-- 1 3
748 MHz
19.5
37.0
6.1
--37.5
-- 2 4
768 MHz
19.4
37.9
6.1
--37.8
-- 1 6
1. Part internally matched both on input and output.
(continued)
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